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DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D167
BGY2016 UHF amplifier module
Product specification Supersedes data of 1999 Nov 24 2000 Jan 04
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES * 26 V nominal supply voltage * 16 W output power into a load of 50 with an RF drive power of 20 mW. APPLICATIONS * Base station transmitting equipment operating in the 1805 to 1990 MHz frequency band. DESCRIPTION The BGY2016 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate.
handbook, halfpage
BGY2016
PINNING - SOT365A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground DESCRIPTION
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 C. MODE OF OPERATION CW f (MHz) 1805 to 1990 VS1 (V) 5 VS2 (V) 26 PL (W) 16 Gp (dB) 28 (%) 30 ZS; ZL () 50
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb PARAMETER DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature Tmb = 25 C CONDITIONS - - - -30 -10 MIN. 4.5 MAX. 5.5 28 120 20 +100 +90 V V mW W C C UNIT
2000 Jan 04
2
Philips Semiconductors
Product specification
UHF amplifier module
CHARACTERISTICS Tmb = 25 C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS = ZL = 50 unless otherwise specified. SYMBOL f IS1 IS2 PL Gp Gp Gp1 - Gp2 H2 H3 VSWRin PARAMETER frequency supply current supply current load power power gain in band gain variation gain expansion efficiency second harmonic third harmonic input VSWR stability reverse intermodulation B AM bandwidth ruggedness VSWR 2 : 1 through all phases; PL 16 W; VS2 = 25 to 27 V Pcarrier = 16 W; Preverse = -40 dBc; fi = fc 200 kHz corner frequency = 3 dB; Pcarrier = 16 W; modulation = 20% VSWR 5 : 1 through all phases f = 1805 to 1880 MHz; PL = 5 W f = 1930 to 1990 MHz; PL = 5 W Gp1 at PL = 160 mW; Gp2 at PL = 5 mW PL = 16 W PL = 16 W PL = 16 W PD < -60 dBm PD < 20 mW CONDITIONS - - 16 28 - - - 30 - - - - - 2 MIN. 1805 - 80 430 - - - - - - - - - - - - TYP. - - -
BGY2016
MAX. 1990
UNIT MHz mA mA W dB dB dB dB % dBc dBc dBc dBc MHz
35 2 2 1 - -35 -40 2:1 -60 -53 -
no degradation
2000 Jan 04
3
Philips Semiconductors
Product specification
UHF amplifier module
APPLICATION INFORMATION
BGY2016
handbook, full pagewidth
C7 C5
C8 C6
Z1
R1
L1
R2
L2
Z2
C3 C1 50 input
C4 C2 50 output
MGM861
VS1
VS2
Fig.2 Test circuit.
List of components (See Figs 2 and 3) COMPONENT C1, C2 C3, C4 C5, C6 C7, C8 L1, L2 R1, R2 Z1, Z2 Note 1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (r = 4.5); thickness = 1 mm. DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Grade 4S2 Ferroxcube bead metal film resistor stripline; note 1 VALUE 10 F; 35 V 10 nF; 50 V 100 pF; 50 V 10 pF; 50 V - 10 ; 0.4 W 50 - - - - 4330 030 36300 2322 195 13109 - CATALOGUE NO.
2000 Jan 04
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY2016
handbook, full pagewidth
90
42
C7 C5
C8 C6
R1
L1
L2
R2
Z2
C3
C4
Z1
C1
C2
output VS1
VS2 input
MGM862
Dimensions in mm.
Fig.3 Printed-circuit board component layout.
2000 Jan 04
5
Philips Semiconductors
Product specification
UHF amplifier module
MOUNTING RECOMMENDATIONS
BGY2016
To ensure a good thermal contact and to prevent mechanical stress when bolted down, the flatness of the mounting base is designed to be typically better than 0.1 mm. The mounting area of the heatsink should be flat and free from burrs and loose particles. The heatsink should be rigid and not prone to bowing under thermal cycling conditions. The thickness of a solid heatsink should be not less than 5 mm to ensure a rigid assembly. A thin, even layer of thermal compound should be applied between the mounting base and the heatsink to achieve the best possible thermal contact resistance. Excessive use of thermal compound will result in an increase in thermal resistance and possible bowing of the mounting base; too little will also result in poor thermal conduction. The module should be mounted to the heatsink using 3 mm bolts with flat washers. The bolts should first be tightened to "finger tight" and then further tightened in alternating steps to a maximum torque of 0.4 to 0.6 Nm. Once mounted on the heatsink, the module leads can be soldered to the printed-circuit board. A soldering iron may be used up to a temperature of 250 C for a maximum of 10 seconds at a distance of 2 mm from the plastic cap. ESD precautions must be taken to protect the device from electrostatic damage.
2000 Jan 04
6
Philips Semiconductors
Product specification
UHF amplifier module
PACKAGE OUTLINE
BGY2016
Plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 4 in-line leads
SOT365A
D
A F y
U q A
U2 E p U1
L
1
2
bp
3
4
wM vA Q c
e
e1
e
Z
0
10 scale
20 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 9.5 9.0 bp 0.56 0.46 c 0.3 0.2 D 30.1 29.9 E 18.6 18.4 e e1 F 3.25 3.15 L 6.5 6.1 p 4.1 3.9 Q 4.0 3.8 q U U1 15.4 15.2 U2 7.75 7.55 v 0.3 w 0.25 y 0.1 Z 12.8 12.6
2.54 17.78
40.74 48.0 40.54 48.4
OUTLINE VERSION SOT365A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-02-06
2000 Jan 04
7
Philips Semiconductors
Product specification
UHF amplifier module
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BGY2016
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2000 Jan 04
8
Philips Semiconductors
Product specification
UHF amplifier module
NOTES
BGY2016
2000 Jan 04
9
Philips Semiconductors
Product specification
UHF amplifier module
NOTES
BGY2016
2000 Jan 04
10
Philips Semiconductors
Product specification
UHF amplifier module
NOTES
BGY2016
2000 Jan 04
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/03/pp12
Date of release: 2000
Jan 04
Document order number:
9397 750 06658

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